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Proceedings Paper

GaAs-based long-wavelength traveling-wave photodetector
Author(s): JinWei Shi; Chi-Kuang Sun; YingJay Yang; Yijen Chiu; John Edward Bowers
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Paper Abstract

GaAs-based high-speed photodetectors attract lots of attention in the past twenty years due to their maturity in material growth and processing. However their wide bandgap characteristic (830nm) restricts their applications in fiber communication wavelength (1.3(mu) m~1.55(mu) m). Recently some research groups had demonstrated GaAs-based n-i-n, p-i-in waveguide type photodetectors operating at 1.55 (mu) m by taking advantage of the mid-gap defect absorption of low- temperature grown GaAs (LTF-GaAs). In this paper we propose and analyze different bandwidth-limited factors for LTG-GAAs based metal-semiconductor-metal traveling wave photodetector (MSM TWPD) for both long and short wavelength cases. According to our calculation results, MSM TWPDs release the bandwidth limitation bottleneck in previous n-i-n and p-i-n TWPD structures, especially in the long wavelength case. Our analysis indicates that Lt-GaAs based traveling-wave photodetectors can offer excellent bandwidth as well as high saturation power performances in fiber communication wavelength, which corresponds to long absorption length regime.

Paper Details

Date Published: 11 July 2000
PDF: 8 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392187
Show Author Affiliations
JinWei Shi, National Taiwan Univ. (Taiwan)
Chi-Kuang Sun, National Taiwan Univ. (Taiwan)
YingJay Yang, National Taiwan Univ. (Taiwan)
Yijen Chiu, Univ. of California/Santa Barbara (United States)
John Edward Bowers, Univ. of California/Santa Barbara (United States)


Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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