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Proceedings Paper

Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy
Author(s): ChenKe Shu; WenHsiung Lee; YungChung Pan; HuaiYing Huang; HsiaoHui Chen; WenHsiung Chen; WeiKuo Chen; MingChih Lee
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Paper Abstract

The long-term transient spectra of heavily Mg-doped GaN have been investigated. As the excitation power density increased, the broad Mg-induced emission band showed blue- shift revealing characteristic of donor-acceptable pair (DAP) recombination. We also observed an unusually slow intensity decay. The characteristic time constants range from several tenths to a few hundred seconds for emission between 360 and 460 nm. Our results are interpreted in terms of metastability due to compound effects of differential DAP population and recombination rates and uneven acceptor distribution.

Paper Details

Date Published: 11 July 2000
PDF: 6 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392182
Show Author Affiliations
ChenKe Shu, National Chiao Tung Univ. (Taiwan)
WenHsiung Lee, National Chiao Tung Univ. (Taiwan)
YungChung Pan, National Chiao Tung Univ. (Taiwan)
HuaiYing Huang, National Chiao Tung Univ. (Taiwan)
HsiaoHui Chen, National Chiao Tung Univ. (Taiwan)
WenHsiung Chen, National Chiao Tung Univ. (Taiwan)
WeiKuo Chen, National Chiao Tung Univ. (Taiwan)
MingChih Lee, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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