Share Email Print

Proceedings Paper

Built-in electric field investigation on InAs and InGaAs nanostructures by photoreflectance
Author(s): ChihMing Lai; JungHao Huang; Gwo-Jen Jan
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The photoreflectance has been measured on InGaAs/GaAs multiple strained quantum wells structures at room temperature. The Franz-Keldysh Oscillation (FKOs) features are clearly observed on photoreflectance spectra. Based on FKOs features above the energy band gap, the built-in electric field was studied by conventional FKOs calculation and the Fast Fourier Transform, and Airy function fit techniques. The built-in electric fields were evaluated and discussed. The results show that Fast Fourier Transform could provide an accurate and fast method to calculate the built-in electric field.

Paper Details

Date Published: 11 July 2000
PDF: 7 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392181
Show Author Affiliations
ChihMing Lai, National Taiwan Univ. (Taiwan)
JungHao Huang, National Taiwan Univ. (Taiwan)
Gwo-Jen Jan, National Taiwan Univ. (Taiwan)

Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

© SPIE. Terms of Use
Back to Top