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Proceedings Paper

Performance and reliability of wafer-bonded AlGaInP/mirror/Si light-emitting diodes
Author(s): RayHua Horng; DongSing Wuu; WeiChih Peng; Man-Fang Huang; PinHui Liu; Chi-Hua Seieh; KunChuan Lin
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Paper Abstract

AlGaInP light emitting diode (LED) with a mirror substrate has been successfully fabricated by wafer bonding. The bonding technique using a metallic interlayer has been developed to eliminate handling the fragile, free-standing epilayers. Various structures of the mirror substrate have been studied, and a suitable structure of Au/AuBe/SiO2/Si is proposed. From the observation of the chip fabrication process, it was found that the SiO2 layer could isolate the stress causing from the Si substrate. The device performance of bonded LED is obviously far superior to that of the standard absorb-substrate LED. It exhibits normal p-n diode behavior with a low series resistance. Moreover, the emission wavelength of the bonded LED was independent of the injection current. The low forward series resistance and a good heat sink provided by Si substrate solve the joule heating inhering in conventional LED problem. Furthermore, the bonded LED with high reliability has been demonstrated.

Paper Details

Date Published: 11 July 2000
PDF: 7 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392180
Show Author Affiliations
RayHua Horng, National Chung Hsing Univ. (Taiwan)
DongSing Wuu, Da-Yeh Univ. (Taiwan)
WeiChih Peng, Da-Yeh Univ. (Taiwan)
Man-Fang Huang, Visual Photonics Epitaxy Co. (Taiwan)
PinHui Liu, Visual Photonics Epitaxy Co. (Taiwan)
Chi-Hua Seieh, Visual Photonics Epitaxy Co. (Taiwan)
KunChuan Lin, Visual Photonics Epitaxy Co. (Taiwan)


Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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