Share Email Print
cover

Proceedings Paper

High-growth rate epitaxy of InN film by a novel-design MOCVD
Author(s): FuhHsiang Yang; YingJay Yang; JihHsien Hwang; ChungHan Lee; KueiHsien Chen; ChingYen Lin
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Indium nitride (InN) film was successfully grown on the Si(111)substrate. The growth rate of InN film can be enhanced about four times by a novel-designed MOCVD system with a NH3 pre-cracking device, in which the NH3 was fed through a quartz tube passing over a high temperature (650-850 degree(s)C) graphite. A maximum growth rate of about 6 (mu) m/hr in our system was achieved due to high cracking efficiency of NH3. The growth temperature of substrate widely ranged from 350to 600 degree(s)C provides more flexible conditions to improve the film quality. The X-ray diffraction peaks of 31.7 degree(s) and 65.5 degree(s) were obtained from the (0002) and (0004) InN respectively, indicating (0001)-oriented hexagonal InN was epitaxially grown on the silicon(111) substrate.

Paper Details

Date Published: 11 July 2000
PDF: 7 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392179
Show Author Affiliations
FuhHsiang Yang, National Taiwan Univ. (Taiwan)
YingJay Yang, National Taiwan Univ. (Taiwan)
JihHsien Hwang, Institute of Atomic and Molecular Sciences (Taiwan)
ChungHan Lee, Institute of Atomic and Molecular Sciences (Taiwan)
KueiHsien Chen, Institute of Atomic and Molecular Sciences (Taiwan)
ChingYen Lin, National Taiwan Univ. (Taiwan)


Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

© SPIE. Terms of Use
Back to Top