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Proceedings Paper

Raman and hot electron-neutral acceptor luminescence studies of electron-optical phonon interactions in GaAs/A1xGa1-xAs quantum wells
Author(s): ChihMing Wang; HorngYu Chang; Kien Wen Sun; ShyangYeu Wang; Chien-Ping Lee
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Paper Abstract

Using two optical techniques, we have measured the Frohlich interactions between electrons and optical phonons on a number of different Be-doped GaAs/AlxGa1-xAs multiple quantum well structures. Raman scattering measurements at 15 K are presented for GaAs/AlxGa1- xAs quantum wells with Al compositions of x=0.3,0.5,0.7 and 1.0. And also for GaAs/AiAs, GaAs/Al0.7Ga0.3As with fixed well width of 50A and barrier with between 5 to 120 A. The GaAs-like and AlAs-like phonon frequencies of the first-order modes are measured as a function of Al composition and barrier widths. We have also performed hot electron - neutral acceptor luminescence in order to determine average optical phonon energies emitted by the photoexcited electrons in quantum wells with the acceptor levels of the GaAs wells. It is shown that the relaxation of hot electrons in the GaAs/AlxGa1-xAs quantum wells is dominated byt the GaAs LO phonon emission for small x, but by AlAs-like LO phonons for larger Al compositions. For the quantum wells with largest barrier width of 5 A, the energy of emitted LO phonon decreases to a value close to the GaAs Lo phonons, nevertheless, there is still a significant contribution from the emission of AlAs-like modes.

Paper Details

Date Published: 11 July 2000
PDF: 11 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392177
Show Author Affiliations
ChihMing Wang, Feng Chia Univ. (Taiwan)
HorngYu Chang, Feng Chia Univ. (Taiwan)
Kien Wen Sun, Feng Chia Univ. (Taiwan)
ShyangYeu Wang, National Chiao Tung Univ. (Taiwan)
Chien-Ping Lee, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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