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Proceedings Paper

Cosputtering effect in titanium oxides by ion-beam sputtering deposition
Author(s): JinCherng Hsu; Cheng-chung Lee; LuuGen Hwa
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Paper Abstract

Cosputtering of titanium oxide films with aluminum (al), fuse silicon (SiO2) and silicon (Si) is investigated. Their optical properties, surface morphology and structure show better than pure titanium oxide. In general, the extinction coefficient and surface roughness of the cosputtered films are smaller than the pure TiO2 film. Also, the microstructure of the cosputtered films are improved to an amorphous structure even though post-baked up to 450 degree(s)C.

Paper Details

Date Published: 11 July 2000
PDF: 9 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392176
Show Author Affiliations
JinCherng Hsu, National Central Univ. (Taiwan)
Cheng-chung Lee, National Central Univ. (Taiwan)
LuuGen Hwa, Fu Jen Catholic Univ. (Taiwan)


Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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