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Proceedings Paper

Improved interferometric method for determination of the mechanical properties of metal oxide films
Author(s): Chuen-Lin Tien; Cheng-chung Lee; KiePin Chuang
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Paper Abstract

Most microelectronic devices and sensors are fabricated by using thin film deposition. Understanding metal oxide films is important in the electronic applications. We report an improved interferometric method based on a phase shifting technique to determine the mechanical properties of metal oxide films. Thin films were prepared by ion-beam sputter deposition at low substrate temperature. Quantitative determination of the mechanical properties such as the internal stress, the biaxial elastic modulus and the thermal expansion coefficient were investigated. A phase shifting Twyman-Green interferometer wiht the phase reduction algorithm was set up to measure the stress in thin films. Two types of circular glass plates, with known Young's moduli. Poisson's ratios and thermal expansion coefficients, were used as coating substrates. The temperature-dependent stress behavior of the metal oxide films was obtained by heating samples in the range from room temperature to 70 degree C. The stresses of thin films deposited on two different substrates were plotted against the stress management temperature, showing a linear dependence. From the slopes of the two lines in the stress versus temperature plot, the intrinsic stress, the biaxial elastic modulus and the thermal expansion coefficient of metal oxide films are then determined.

Paper Details

Date Published: 11 July 2000
PDF: 11 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392173
Show Author Affiliations
Chuen-Lin Tien, Chung Shan Institute of Science and Technology (Taiwan) and National Central Univ. (Taiwan)
Cheng-chung Lee, National Central Univ. (Taiwan)
KiePin Chuang, National Central Univ. (Taiwan)


Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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