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Proceedings Paper

Integration of waveguide-type wavelength demultiplexing photodetectors by selective intermixing of InGaAs/InGaAsP quantum well structure
Author(s): Deok Ho Yeo; Kyung-Hun Yoon; Hang Ro Kim; Sung-June Kim
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Paper Abstract

Wavelength demultiplexing photodetectors was fabricated using selective intermixing of InGaAs/InGaAsP multi-quantum well (MQW) structure. As InGaAs/InGaAsP MQW with U-InP cladding layer and U-InGaAs cap layer grown by metal organic chemical vapor deposition (MOCVD) was used for this experiment. Intermixing of InGaAs/InGaAsP MQW structure was done by a rapid thermal annealing after depositing SiO2 dielectric layer on the InGaAs cap layer by plasma-enhanced chemical vapor deposition (PECVD). Three sections of shorter-wavelength PD, absorber region and longer-wavelength PD lined up linearly and the front two regions were intermixed. Output current ratios of fabricated photodetectors at wavelengths of 1550 and 1480 nm were about 20dB and thus the photodetectors were proven to demultiplex both wavelengths.

Paper Details

Date Published: 11 July 2000
PDF: 8 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392157
Show Author Affiliations
Deok Ho Yeo, Seoul National Univ. (South Korea)
Kyung-Hun Yoon, Seoul National Univ. (South Korea)
Hang Ro Kim, Seoul National Univ. (South Korea)
Sung-June Kim, Seoul National Univ. (South Korea)

Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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