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Proceedings Paper

Picosecond imaging of hot electron emission from CMOS circuitry
Author(s): Kartik Ramanujachar; Dolf Landheer; Sylvain Raymond; N. Sylvain Charbonneau; Peter T. Coleridge; Tahui Wang
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Paper Abstract

This paper describes the spatially and temporally resolved images from submicron NFETS and a CMOS ring-oscillator circuit. The spatial and temporal information is supplemented by spectral measurements obtained using a set of optical band-pass filters. The intensity of luminescence has been observed on individual transistors with gate-length downs to 0.2 microns. The time-resolution of ~ 100 ps is sufficient to observe the response of individual invertors for gate lengths of 0.8 microns and even lower. Preliminary work on spectral distributions on emission from both the ring oscillator and NFET indicated a peak around 850nm. This may be limited on the long-wavelength side by the response of the photomultiplier photocathode, indicating that better sensitivity could be achieved with extended infra-red sensitivity. The spectral distribution is explained with reference to current theories.

Paper Details

Date Published: 11 July 2000
PDF: 6 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392155
Show Author Affiliations
Kartik Ramanujachar, National Research Council Canada (United States)
Dolf Landheer, National Research Council Canada (Canada)
Sylvain Raymond, National Research Council Canada (Canada)
N. Sylvain Charbonneau, National Research Council Canada (Canada)
Peter T. Coleridge, National Research Council Canada (Canada)
Tahui Wang, National Chiao-Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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