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Proceedings Paper

Temperature- and field-dependent quantum efficiency in tris-(8-hydroxy) quinoline aluminum organic light-emitting diode
Author(s): Shymal Kumar Saha; Yan-Kuin Su; Fuh Shyang Juang
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Paper Abstract

Temperature- and field-dependent electroluminescence and quantum efficiency have been investigated in tris-(8hydroxy) quinoline aluminum (Alq3)light emitting diode over the temperature range from 10K to 300K. It has been observed that up to a certain temperature luminescence intensity decreases with decreasing temperature and then saturated in the low temperature region. The quantum efficiency increases with decreasing temperature and finally reaches to almost a constant value. At lower applied voltage, two peaks have been observed in the quantum efficiency with temperature. The two peaks are attributed due to deep trap levels (high temperature regime) and shallow trap levels (low temperature regime) in Alq3.

Paper Details

Date Published: 11 July 2000
PDF: 7 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392151
Show Author Affiliations
Shymal Kumar Saha, National Cheng Kung Univ. (Taiwan)
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)
Fuh Shyang Juang, National Huwei Institute of Technology (Taiwan)

Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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