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Proceedings Paper

New concept technology: pressure-variation liquid phase epitaxy
Author(s): XiangJun Mao; Yuen Chuen Chan; Yee Loy Lam; JingYi Zhu; YunXi Shi
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Paper Abstract

Liquid phase epitaxy (LPE) is an important technique to grow GaSb-based materials of good crystal quality. Normally, one has to lower the growth temperature below the liquid-phase liquidus temperature to realize supercooling of the liquid phase. Here we bring forth a new type of LPE, pressure- variation LPE (PV-LPE), where a varying pressure is used to realize supercooling of the liquid phase even though the growth temperature is kept constant. Calculations show that there exists a simple relationship between the liquid content and pressure, which theoretically illustrates that crystal growth could be easily controlled by changing the pressure.

Paper Details

Date Published: 11 July 2000
PDF: 12 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392141
Show Author Affiliations
XiangJun Mao, Nanyang Technological Univ. (Singapore)
Yuen Chuen Chan, Nanyang Technological Univ. (Singapore)
Yee Loy Lam, Nanyang Technological Univ. (Singapore)
JingYi Zhu, Nanyang Technological Univ. (Singapore)
YunXi Shi, Nanyang Technological Univ. (Singapore)

Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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