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Proceedings Paper

Phase calculation of (100) oriented InGaAsP grown with liquid phase epitaxy
Author(s): JingYi Zhu; XiangJun Mao; Yuen Chuen Chan; Yee Loy Lam
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Paper Abstract

A comprehensive analysis of the phase InGaAsP quaternary lattice-matched to the (100) oriented InP substrate was carried out. Here we used a very efficient computation method, the Levenberg-Marquardt least squares minimization method, to look into the Ga$1-x)AsyP$1-y) phase diagram in great detail. We obtained a novel result: Two solutions are available for each solid ingredient in InGaAsP. One of the solutions is new, while the other agrees well with the empirical expressions relating the solution and solid compositions in the temperature range of 570 degree(s)C ~660 degree(s)C for the growth of InxGa$1-x)AsyP$1-y) on (100) InP substrate.

Paper Details

Date Published: 11 July 2000
PDF: 9 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392140
Show Author Affiliations
JingYi Zhu, Nanyang Technological Univ. (Singapore)
XiangJun Mao, Nanyang Technological Univ. (Singapore)
Yuen Chuen Chan, Nanyang Technological Univ. (Singapore)
Yee Loy Lam, Nanyang Technological Univ. (Singapore)


Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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