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Proceedings Paper

High efficiency tunneling-regenerated multi-active region light-emitting diodes
Author(s): Xia Guo; Guangdi Shen; Guohong Wang; Jinyu Du; WeiLing Guo; Guo Gao; Wenjun Zhu; Deshu Zou
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Paper Abstract

A new mechanism of tunneling-regenerated multi-active region LEDs with high quantum efficiency and high brightness has been presented. The layer structure, MOCVD growth, device technology, a several of measured curves and their analysis of these new mechanism LEDs were shown in the paper. It was theoretically and experimentally resulted in that efficiency of the electro-luminescence and the on-axis luminous intensity can linearly increase approximately with the number of active regions.

Paper Details

Date Published: 11 July 2000
PDF: 10 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392139
Show Author Affiliations
Xia Guo, Beijing Polytechnic Univ. (China)
Guangdi Shen, Beijing Polytechnic Univ. (China)
Guohong Wang, Beijing Polytechnic Univ. (China)
Jinyu Du, Beijing Polytechnic Univ. (China)
WeiLing Guo, Beijing Polytechnic Univ. (China)
Guo Gao, Beijing Polytechnic Univ. (China)
Wenjun Zhu, Beijing Polytechnic Univ. (China)
Deshu Zou, Beijing Polytechnic Univ. (China)


Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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