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Proceedings Paper

Low-threshold current densities of 1.5-μm wavelength (110) GaInAs(P) QW lasers along [001] direction
Author(s): Kunishige Oe; Rajaram J. Bhat; Mineo Ueki; Manabu Mitsuhara
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Paper Abstract

(110)-oriented GaInAs(P) quantum well lasers along [001] direction have been fabricated to investigate growth direction effects of the QW structure on laser performance. The structures were grown by two methods; MOVPE and MOMBE. Threshold current densities of the QW lasers were investigated for wide stripes aligned in the [001] and [110] directions from the same wafer. As there is no cleaved facets for lasers along [001] direction, the mirror facets were formed parallel to the (001) face by reactive-ion- etching (RIE) using Bbr3 gas. Strong in-lane anisotropic lasing characteristics in the lasers made of the (110)- oriented QW structures were observed between the [001] and [110]cavity directions. This strong anisotrophy in Jth is believed to come from the stronger oscillator strength in the [001] direction. Fairly low threshold current densities of less than 0.6 KA/cm2 were obtained for the lasers with cavities along [001] direction in spite of the lower reflectivity of the RIE-etched mirror surface. The result in this research shows the expected advantage of the (110) lasers along the [001] cavity direction and suggests an advantage of the (110) QW structure in the application for long wavelength surface emitting lasers.

Paper Details

Date Published: 11 July 2000
PDF: 9 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392136
Show Author Affiliations
Kunishige Oe, Kyoto Institute of Technology (Japan)
Rajaram J. Bhat, Corning Inc. (United States)
Mineo Ueki, NTT Electronics (Japan)
Manabu Mitsuhara, NTT Photonics Labs. (Japan)


Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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