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Proceedings Paper

Radiative recombination mechanisms in InGaN/AlGaN single-quantum-well LED revealed by time-resolved photoluminescence spectra under external electric fields
Author(s): Hiromitsu Kudo; Tomoyuki Tanabe; Hiroki Ishibashi; Ruisheng Zheng; Yoichi Yamada; Tsunemasa Taguchi
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Paper Abstract

The radiative recombination mechanism of InGaN single-quantum- well (SOW) blue light-emitting diodes (LEDs) and InGaN double heterostructure (DH) ultraviolet (UV) LEDs has extensively been investigated by means of the dependence of photoluminescence (PL) and time-resolved PL (TRPL) spectra on an external-electric field. Two emission components are found in the luminescence spectra from each LED on the condition of reverse-bias at 77 K. It is also found that the luminescence intensity of the LEDs decreases dramatically with increasing reverse-bias voltage at room temperature (RT). The model based on field ionization of excitons cannot explain the present experimental phenomena. It is therefore suggested that the free-carrier recombination process is dominant at RT. We have also suggested that these experimental results on the blue and UV LEDs can be explained by the same recombination model. Finally, on the basis of both the experimental ecidence in In0.08Ga0.92N epitaxial layers and strong electron-phonon interaction, the radiative recombination mechanism on InxGa1-xN ternary alloys has been discussed.

Paper Details

Date Published: 11 July 2000
PDF: 8 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392133
Show Author Affiliations
Hiromitsu Kudo, Yamaguchi Univ. (Japan)
Tomoyuki Tanabe, Yamaguchi Univ. (Japan)
Hiroki Ishibashi, Yamaguchi Univ. (Japan)
Ruisheng Zheng, Yamaguchi Univ. (Japan)
Yoichi Yamada, Yamaguchi Univ. (Japan)
Tsunemasa Taguchi, Yamaguchi Univ. (Japan)


Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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