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Proceedings Paper

One-dimensional arrays of self-assembled InAs/InP quantum dots
Author(s): Jacques Lefebvre; Philip J. Poole; John P. McCaffrey; Boris Lamontagne; Geof C. Aers; Chien-Ping Lee; ShuFen Hu; Robin L. Williams
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Paper Abstract

The Stranski-Krastanov (S-K) self-assembly process produces quantum dots with a large distribution of sizes. In the S-K growth mode, the in-plane spatial distribution of dots is quasi-random. Different strategies have been used to narrow the size distribution and increase the dot-dot spatial correlation. Here, we report a simple method to reduce the height of taller dots by using the P/As exchange exhibited during CBE growth. The fabrication of InAs/InP quantum dots self-assembled into linear arrays through growth on patterned substrates is described. Photoluminescence from one-dimensional arrays is compared with the non-correlated case of quantum dots grown on planar substrates. The interplay between size and spatial distributions is discussed.

Paper Details

Date Published: 11 July 2000
PDF: 5 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392132
Show Author Affiliations
Jacques Lefebvre, National Research Council Canada (Canada)
Philip J. Poole, National Research Council Canada (Canada)
John P. McCaffrey, National Research Council Canada (Canada)
Boris Lamontagne, National Research Council Canada (Canada)
Geof C. Aers, National Research Council Canada (Canada)
Chien-Ping Lee, National Chiao Tung Univ. (Taiwan)
ShuFen Hu, National Nano Device Labs. (Taiwan)
Robin L. Williams, National Research Council Canada (Canada)

Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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