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Proceedings Paper

Observation of self-assembled InAs/GaAs quantum dot structure with temperature-dependent photoluminescence and measurement of electrical characteristics
Author(s): ShiangFeng Tang; Shih-Yen Lin; YuCheng Liao; Si-Chen Lee; Ya-Tung Cherng
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Paper Abstract

Self-assembled quantum dot has been realized in different optical-electric material systems and different growth techniques using Stranski-Krastanow growth mode [1]. The optical properties of quantum dots are of physical interest due to the experimental investigation. The theoretical predictions of quantum dot device have been well verified [2]. In the article, we studied the temperature dependent electrical and optical properties [2,3] of quantum dot under normal incidence. From the measurement results, we found the three-dimensional confinement of QD structure and the inter- confined state [4-6].

Paper Details

Date Published: 11 July 2000
PDF: 9 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392131
Show Author Affiliations
ShiangFeng Tang, National Taiwan Univ. (Taiwan)
Shih-Yen Lin, National Taiwan Univ. (Taiwan)
YuCheng Liao, National Taiwan Univ. (Taiwan)
Si-Chen Lee, National Taiwan Univ. (Taiwan)
Ya-Tung Cherng, Chung Shan Institute of Science and Technology (Taiwan)


Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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