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Proceedings Paper

Temperature dependence of quantum dot lasers
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Paper Abstract

Carrier dynamics in self-assembled quantum dots, grown by molecular beam epitaxy, have been studied. The temperature dependence of the relaxation times, measured by room temperature high frequency impedance response of quantum dot lasers and by low temperature (T=4K) differential transmission spectroscopy, strongly suggests that electron- hole scattering is the dominant scattering mechanism in quantum dots. The favorable relaxation times can be exploited to realize far infrared emission and detection based on intersubband transitions in the dots.

Paper Details

Date Published: 11 July 2000
PDF: 10 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392129
Show Author Affiliations
Dennis G. Deppe, Univ. of Texas at Austin (United States)
Gyoungwon Park, Univ. of Texas at Austin (United States)
Oleg B. Shchekin, Univ. of Texas at Austin (United States)

Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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