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Proceedings Paper

Temperature dependence of the hysteresis for the a-Si:H gate pH-ISFET
Author(s): Jung Chuan Chou; Hsjian-Ming Tsai; Yii Fang Wang
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Paper Abstract

In application of the pH-ISFET, the hysteresis and temperature effects are two important influences of accuracy. There have been many studies about the above subjects, however, the hysteresis behaviour will change with the temperature and affect the reproducibility of the devices. Hence, we study the temperature dependence of the hysteresis behaviour for the pH-ISFET with a-Si:H gate insulator deposited by the PE-LPCVD system in this paper. The thickness of the a-Si:H was about 2000 A. The temperature is controlled by the P.I.D. temperature controlled system and the hysteresis behaviour is measured by the constant voltage-constant current circuit and voltage-time recorder. The measurement is completed at 25 degree(s)C, 35 degree(s)C, 45 degree(s)C and 55 degree(s)C and the time after the pH changed is 4 min, The experimental results also compared with other materials of the gate insulator for pH-ISFET at the room temperature.

Paper Details

Date Published: 11 July 2000
PDF: 8 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392126
Show Author Affiliations
Jung Chuan Chou, National Yunlin Univ. of Science and Technology (Taiwan)
Hsjian-Ming Tsai, National Yunlin Univ. of Science and Technology (Taiwan)
Yii Fang Wang, National Yunlin Univ. of Science and Technology (Taiwan)

Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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