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Proceedings Paper

Hysteresis effect of pH-ISFET based on Beckman Φ 110 (Si3N4 gate pH-ISFET)
Author(s): Jung Chuan Chou; Yu Neng Tseng
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Paper Abstract

In this study, the commercial manufacture Beckman 110 (Si3N4 gate pH-ISFET) was acted as the sensitive membrane of pH-ISFET. The experimental results show that the Si3N4 material has a fairly high response, and the pH sensitivity was obtained at 56.94 mV/pH in a concentration rage between pH 1 and pH 11 at room temperature. In our experiment, we use Keithley 236 Semiconductor Parameter Analyzer to measure the drain current (IDS) versus gate voltage (VG) curve of Si3N4 ISFET over a pH range from 1 to 11 at room temperature. The constant voltage-current-circuit and time-voltage record were also used to measure the hysteresis curve of Beckman 110 (Si3N4 gate pH-ISFET). The same procedure was also applied to a-Si:H gate pH-ISFET, which fabricated in our laboratory. From the IDS versus VG and hysteresis curve, we can obtain that the pH sensitivity was 56.94 mV/pH at constant temperature (25 degree(s)C) and hysteresis widths of Beckman 110 (Si3N4 gate pH-ISFET) and a- Si:H gate pH-ISFET in the larger pH site are larger than in the smaller pH site, and the hysteresis width increased with the increasing loop time and measureing path.

Paper Details

Date Published: 11 July 2000
PDF: 8 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392124
Show Author Affiliations
Jung Chuan Chou, National Yunlin Univ. of Science and Technology (Taiwan)
Yu Neng Tseng, National Yunlin Univ. of Science and Technology (Taiwan)


Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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