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Proceedings Paper

Effects of gamma-ray irradiation on the microstructural and luminescent properties of radio-frequency magnetron-sputtered GaN thin films
Author(s): Ching-Wu Wang; BoShao Soong; ChungTung Tzeng; Jing-Yu Chen; ChihLiang Chen
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Paper Abstract

The microstructural and luminescent properties of sputtered GaN thin films pre-irradiated and the (gamma) -ray irradiated were systematically investigated. Analytical results revealed that the increasing dose of (gamma) -rays could enhance the more occurrence of nitrogen vacancies which not only created a prominent deep level luminescence but also destroyed the crystallinity of GaN thin films. For lose dose of (gamma) -ray irradiation (4 Mrad (GaN)), evidence showed that by raising the irradiation dose, more associated Ga-H complexes will be effectively promoted, yielding an enhanced yellow bad emission. However for high dose of (gamma) -ray irradiation (4 Mrad (GaN)), further higher dose of (gamma) - rays could lead the dissociation of Ga-H complexes in GaN samples, resulting in a repressed yellow band emission.

Paper Details

Date Published: 11 July 2000
PDF: 8 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392117
Show Author Affiliations
Ching-Wu Wang, I-Shou Univ. (Taiwan)
BoShao Soong, I-Shou Univ. (Taiwan)
ChungTung Tzeng, I-Shou Univ. (Taiwan)
Jing-Yu Chen, I-Shou Univ. (Taiwan)
ChihLiang Chen, I-Shou Univ. (Taiwan)


Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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