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Proceedings Paper

High performance of InGaP/GaAs MSM photodetectors using Cu/Au Schottky contact
Author(s): ChangDa Tsai; Yow-Jon Lin; DayShan Liu; Ching-Ting M. Lee
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Paper Abstract

We present the high performance of InGaP/GaAs metal- semiconductor-metal photodetectors (MSM-PDs) using copper as the interdigital Schottky electrodes. The devices exhibit ultra-low dark current (70 pA at bias of 10 V) and ultra- fast pulse response (over 9 Ghz). The notable dark current characteristic and the absence of trap-induced gain are accredited to the superior properties of InGaP capping layer. The superior performances of InGaP/GaAs MSM-PDs make it promising for data communication.

Paper Details

Date Published: 11 July 2000
PDF: 8 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392113
Show Author Affiliations
ChangDa Tsai, National Central Univ. (Taiwan)
Yow-Jon Lin, National Central Univ. (Taiwan)
DayShan Liu, National Central Univ. (Taiwan)
Ching-Ting M. Lee, National Central Univ. (Taiwan)

Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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