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Proceedings Paper

Sensing characteristics of ISFET based on AlN thin film
Author(s): Jung Lung Chiang; Shiun-Sheng Jan; Ying-Chung Chen; Jung Chuan Chou
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Paper Abstract

In the past years, the aluminum nitride (AIN) thin films were usually applied to the surface acoustic wave (SAW) devices, optical devices in the ultraviolet spectral region, acousto-optic devices and integrated circuit packaging. In this study, we first selected the AIN thin film as gate insulator for pH sensing ISFET in our laboratory. We have studied the relationship between pH sensitivity and surface potential for AIN gate ISFET in the different solutions. And we also have obtained the pH characteristics from the capacitance-voltage (C-V) and current voltage (I-V) curves. Herein, we can obtain the shift of the linear region threshold voltage of the AIN/SiO2 gate ISFET devices in the different buffer solutions. The AIN materials exhibited a high response, and the sensitivity was about 45~51 mV/pH. In addition, we have also compared with different sensing materials.

Paper Details

Date Published: 11 July 2000
PDF: 8 pages
Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); doi: 10.1117/12.392108
Show Author Affiliations
Jung Lung Chiang, National Sun Yat-sen Univ. (Taiwan)
Shiun-Sheng Jan, National Sun Yat-sen Univ. (Taiwan)
Ying-Chung Chen, National Sun Yat-sen Univ. (Taiwan)
Jung Chuan Chou, National Yunlin Univ. of Science and Technology (Taiwan)


Published in SPIE Proceedings Vol. 4078:
Optoelectronic Materials and Devices II
Yan-Kuin Su; Pallab Bhattacharya, Editor(s)

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