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Proceedings Paper

CrOxFy as a material for attenuated phase-shift masks in ArF lithography
Author(s): Keisuke Nakazawa; Takahiro Matsuo; Toshio Onodera; Hiroaki Morimoto; Hiroshi Mohri; Chiaki Hatsuta; Naoya Hayashi
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Paper Abstract

We investigated the durability of CrOxFy film, which is used as a shifter for attenuated phase-shift masks (Att- PSMs), under ArF excimer laser irradiation. The phase shift of an as-deposited film decreased and the transmittance increased due to the disappearance of interfaces, which was caused by the migration of atoms. To improve durability, the sample was annealed at 300 degrees C to remove the interfaces, and the surface was etched to recover the decreased transmittance caused by the annealing. As a result, the lifetime became 1.5 years, which is sufficient for practical devices. The depth-of-focus of an ArF photoresist was 1.2 micrometers for a 0.13 micrometers line-and-space pattern and 0.5 micrometers for an 0.13 micrometers isolated contact- hole pattern when Att-PSMs made from CrOxFy film were used.

Paper Details

Date Published: 19 July 2000
PDF: 6 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392100
Show Author Affiliations
Keisuke Nakazawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Takahiro Matsuo, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshio Onodera, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroaki Morimoto, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co., Ltd. (Japan)
Chiaki Hatsuta, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

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