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Proceedings Paper

Phase defects on DUV alternating PSMs
Author(s): Ikuo Yoneda; Hideki Kanai; Shinji Yamaguchi; Iwao Higashikawa
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Paper Abstract

To extend the life of photolithography, it has been proceeded the development of the strong PSMs which has no printing 'phase shifter' defects. At PMJ '98 a defect inspection algorithm for phase shifter defects of 60 degrees on i-line multi-phase alternating PSMs was discussed. At BACUS '99, a defect printability and inspection sensitivity of multi-phase shifter defect for KrF exposure had also discussed. It was reported that the inspection tool combing \9MD84SR and STARlight had enough sensitivity for quartz bump defect that caused +/- 10 percent CD-error on 150nm L and S pattern. But, the delay of ArF exposure tool and process required DUV low-k1-lithography for next generation devices. And the, we tried to evaluate defects printability and inspection sensitivity for Logic-Gate pattern mask, that lien width is narrower than the line width evaluated by precede researchers.

Paper Details

Date Published: 19 July 2000
PDF: 10 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392097
Show Author Affiliations
Ikuo Yoneda, Toshiba Corp. (Japan)
Hideki Kanai, Toshiba Corp. (Japan)
Shinji Yamaguchi, Toshiba Corp. (Japan)
Iwao Higashikawa, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

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