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Proceedings Paper

New photomask pattern generation method based on i-line stepper
Author(s): Suigen Kyoh; Shun-Ichiro Tanaka; Soichi Inoue; Iwao Higashikawa; Ichiro Mori; Katsuya Okumura; Nobuyuki Irie; Koji Muramatsu; Yuuki Ishii; Nobutaka Magome; Toshikazu Umatate
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Paper Abstract

New pattern generation system, Photomask Repeater, based on i-line stepper has been developed. This system can transfer device patterns from master masks onto a photomask plate with 22mm field size. To print a chip larger than the 22mm field, stitching technology has been developed. Critical dimension error in the region where fields are stitched is the key issue of this technology. Quantification of critical dimension deviation induced by field misplacement was carried out by calculation. Introducing exposure dose gradation, it was reduced less than 1.5nm. From measurements of a real exposed mask this technique proved to be able to stitch fields seamlessly. Major two specifications, pattern placement accuracy and critical dimension uniformity, were evaluated. Both specifications required for 150nm photomasks were fully satisfied. Availability of the photomask repeater to memory device and system on chip is discussed.

Paper Details

Date Published: 19 July 2000
PDF: 10 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392096
Show Author Affiliations
Suigen Kyoh, Toshiba Corp. (Japan)
Shun-Ichiro Tanaka, Toshiba Corp. (Japan)
Soichi Inoue, Toshiba Corp. (Japan)
Iwao Higashikawa, Toshiba Corp. (Japan)
Ichiro Mori, Toshiba Corp. (Japan)
Katsuya Okumura, Toshiba Corp. (Japan)
Nobuyuki Irie, Nikon Corp. (Japan)
Koji Muramatsu, Nikon Corp. (United States)
Yuuki Ishii, Nikon Corp. (Japan)
Nobutaka Magome, Nikon Corp. (Japan)
Toshikazu Umatate, Nikon Corp. (Japan)


Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

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