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Proceedings Paper

Current status of 157-nm mask technology development
Author(s): Giang T. Dao; Ronald Kuse; Kevin J. Orvek; Eric M. Panning; Roswitha Remling; Jun-Fei Zheng; Munehiko Tsubosaki; Fu-Chang Lo
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Paper Abstract

157-nm lithography has gained significant momentum and worldwide support as the post-193 nm technology. Due to higher absorption at shorter wavelength, however, there are several critical issues including materials and reticle handling at 157-nm. These key technical areas are being studied at Intel in collaboration with worldwide industrial and academic partners. In this paper, we will report the progress on 157-nm specific mask technology development.

Paper Details

Date Published: 19 July 2000
PDF: 12 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392091
Show Author Affiliations
Giang T. Dao, Intel Corp. (United States)
Ronald Kuse, Intel Corp. (United States)
Kevin J. Orvek, Intel Corp. (United States)
Eric M. Panning, Intel Corp. (United States)
Roswitha Remling, Intel Corp. (United States)
Jun-Fei Zheng, Intel Corp. (United States)
Munehiko Tsubosaki, Intel K.K. (Japan)
Fu-Chang Lo, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

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