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Proceedings Paper

Advanced FIB mask repair technology in ArF lithography
Author(s): Koji Hiruta; Shinji Kubo; Hiroaki Morimoto; Anto Yasaka; Ryoji Hagiwara; Tatsuya Adachi; Yasutaka Morikawa; Kazuya Iwase; Naoya Hayashi
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Paper Abstract

New ion beam column was used for mask repair. The ion irradiation was 15pA for the probe current and 31nm for the pixel size. The imaging damage was evaluated from the optical intensity value with MSM193. Optical intensity have the change within 5 percent in case of the repetition image in scanning until five times. The carbon film was formed with a new hydrocarbon gas which change into the pyrene. It is a film that the halo is small and the optical density is about three times higher. The durability to the ArF laser of the carbon film was done by method of measuring the transmittance with MPM193. The carbon film has the durability that exchange in the transmittance is within 0.3 percent by ArF laser irradiation of 30KJ cm-2. The program defects formed to the L and S pattern was repaired by these new conditions. The repaired pattern was printed with ArF scanner on the wafer. The reported pattern was not transferred defect on the wafer.

Paper Details

Date Published: 19 July 2000
PDF: 8 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392089
Show Author Affiliations
Koji Hiruta, Semiconductor Leading Edge Technologies, Inc. (Japan)
Shinji Kubo, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroaki Morimoto, Semiconductor Leading Edge Technologies, Inc. (Japan)
Anto Yasaka, Seiko Instruments, Inc. (Japan)
Ryoji Hagiwara, Seiko Instruments, Inc. (Japan)
Tatsuya Adachi, Seiko Instruments, Inc. (Japan)
Yasutaka Morikawa, Dai Nippon Printing Co., Ltd. (Japan)
Kazuya Iwase, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

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