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Proceedings Paper

Effective OPC pattern generation using chemically amplified resist for 0.13-um design rule masks
Author(s): Il-Ho Lee; Kyung-Han Nam; Hong-Seok Kim
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Paper Abstract

We investigated the printability of various OPC patterns with different sizes and densities for mask technology below 0.13 micrometers design rule using CAR and 50kV e-beam system. Because of high resolution characteristics of CAR process with high acceleration voltage system, we obtained OPC printability of 0.12 micrometers even in scattering bar type and excellent pattern fidelity. How to design to get required OPC pattern, design guide was considered in this work and discussed the applicability of CAR process to practical manufacturing of OPC masks of 0.13 micrometers design rule or less.

Paper Details

Date Published: 19 July 2000
PDF: 11 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392083
Show Author Affiliations
Il-Ho Lee, DuPont Photomasks Korea Ltd. (South Korea)
Kyung-Han Nam, DuPont Photomasks Korea Ltd. (South Korea)
Hong-Seok Kim, DuPont Photomasks Korea Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

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