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Proceedings Paper

Optical column of the mask-scan EB mask writer test stand
Author(s): Naoharu Shimomura; Munehiro Ogasawara; Jun Takamatsu; Hitoshi Sunaoshi; Kiyoshi Hattori; Shusuke Yoshitake; Yuuji Fukudome; Kiminobu Akeno
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Paper Abstract

A deficiency in throughput is one of the main problems for the post-100 nm generation mask writer. Mask-scan writing technology is one of the methods for increasing in the throughput. A large pattern is projected by scanning the electron beam over the mask pattern. We have developed a low aberration optical column to prove the concept of the mask- scan technology. We obtained the EB mask pattern image by scanning the electron beam over the mask. We confirmed the capability of the astigmatism correction by the bias voltage superposed on the main field deflectors.

Paper Details

Date Published: 19 July 2000
PDF: 8 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392076
Show Author Affiliations
Naoharu Shimomura, Toshiba Corp. (Japan)
Munehiro Ogasawara, Toshiba Corp. (Japan)
Jun Takamatsu, Toshiba Corp. (Japan)
Hitoshi Sunaoshi, Toshiba Corp. (Japan)
Kiyoshi Hattori, Toshiba Corp. (Japan)
Shusuke Yoshitake, Toshiba Corp. (Japan)
Yuuji Fukudome, Toshiba Corp. (Japan)
Kiminobu Akeno, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

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