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Proceedings Paper

Improvement of the resolution and accuracy of chemical-amplification positive resist for 0.13-μm reticle fabrication
Author(s): Tadashi Arai; Toshio Sakamizu; Kei Kasuya; Kohji Katoh; Takashi Soga; Hidetaka Saitoh; Hiroshi Shiraishi; Morihisa Hoga
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Paper Abstract

We have developed a novolak-based chemical-amplification resist for 0.13-micrometers or later reticle fabrication. For the 0.13-micrometers or later design-rule reticle-fabrication with OPC patterns, the resist resolution is required under 0.2-micrometers on the mask substrate. To improve the chemical-amplification resist resolution, it is necessary to control the acid- diffusion in the resist film. We have developed the technique of the acid-diffusion control with neutral-salt additives. By use of the resist with this technique, we could fabricate 0.14-micrometers 1/s patterns on a CrOx substrate at a dose of 9.3-(mu) C/cm2. The resist has a good margin of doses.

Paper Details

Date Published: 19 July 2000
PDF: 8 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392065
Show Author Affiliations
Tadashi Arai, Hitachi, Ltd. (Japan)
Toshio Sakamizu, Hitachi, Ltd. (Japan)
Kei Kasuya, Hitachi Chemical Co., Ltd. (Japan)
Kohji Katoh, Hitachi Chemical Co., Ltd. (Japan)
Takashi Soga, Hitachi, Ltd. (Japan)
Hidetaka Saitoh, Hitachi, Ltd. (Japan)
Hiroshi Shiraishi, Hitachi, Ltd. (Japan)
Morihisa Hoga, Hitachi, Ltd. (Japan)


Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

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