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Proceedings Paper

Improvement of ZEP process for advanced mask fabrication
Author(s): Yasuyuki Kushida; Youichi Usui; Hisatsugu Shirai
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Paper Abstract

In mask making, ZEP 7000 resist process with MEBES writing tool is widely adopted to produce advanced masks. This time, we tried to improve resist pattern CD uniformity in ZEP process using our special techniques. Resist sensitivity uniformity of mask blank is one of the most significant parameters for resist pattern CD uniformity. In ZEP7000 coating process, our original cooling method waw adopted in consideration of its resist sensitivity properties. Resist film thickness loss (RTL) uniformity during development was examined in order to analyze the resists sensitivity uniformity within a mask blank. It was clearly seen that resist pattern CD uniformity was 15nm with the optimum cooling condition. RTL uniformity and resist pattern CD uniformity were also examined using blanks which were commercially available from two vendors. And these results were compared with the results of our original cooling method. Based on the results of our study, we confirmed that our original cooling method was very effective for improvement of resist pattern CD uniformity on ZEP process.

Paper Details

Date Published: 19 July 2000
PDF: 8 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392063
Show Author Affiliations
Yasuyuki Kushida, Fujitsu Ltd. (Japan)
Youichi Usui, Fujitsu Ltd. (Japan)
Hisatsugu Shirai, Fujitsu Ltd. (Japan)


Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

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