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Proceedings Paper

150-nm mask fabrication using thin ZEP 7000 resist, GHOST, and dry etch for the MEBES 5000 pattern generator
Author(s): Myung Yong Kim; Jong-Hwa Lee; Young Jin Yoon; Boo-Yeon Choi
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Paper Abstract

Advanced reticle specifications for critical dimension control (CD) and CD linearity of 150 nm generation devices requires significant improvements to the mask making process. ZEP 7000 is an e-beam resist that exhibits good contrast properties and acceptable dry etch resistance while maintaining superior lithographic quality. In this paper, an advanced process utilizing thin ZEP 7000 resist and ICP will be described. The combination of these two unit processes describes a factor space in mask making that is acceptable for the production of masks that meet the 150 nm ITRS roadmap requirements.

Paper Details

Date Published: 19 July 2000
PDF: 9 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392061
Show Author Affiliations
Myung Yong Kim, P.K. Ltd. (South Korea)
Jong-Hwa Lee, P.K. Ltd. (South Korea)
Young Jin Yoon, P.K. Ltd. (South Korea)
Boo-Yeon Choi, P.K. Ltd. (South Korea)

Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

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