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Proceedings Paper

Evaluation of loading effect of NLD dry etching
Author(s): Takayuki Iwamatsu; Tatsuya Fujisawa; Koji Hiruta; Hiroaki Morimoto; Noriyuki Harashima; Takaei Sasaki; Mutsumi Hara; Kazuhide Yamashiro; Yasushi Okubo; Yoichi Takehana
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Paper Abstract

Recently, loading effect is becoming a great issue in mask dry etching process. It is well known that the effect is affected by pattern density. To improve the issue, an advanced mask dry etching system using neutral loop discharge was applied for next generation mask fabrication, because the tool make is possible to get high plasma density and low gas pressure.

Paper Details

Date Published: 19 July 2000
PDF: 8 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392060
Show Author Affiliations
Takayuki Iwamatsu, Semiconductor Leading Edge Technologies, Inc. (Japan)
Tatsuya Fujisawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Koji Hiruta, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroaki Morimoto, Semiconductor Leading Edge Technologies, Inc. (Japan)
Noriyuki Harashima, ULVAC Coating Corp. (Japan)
Takaei Sasaki, ULVAC Coating Corp. (Japan)
Mutsumi Hara, HOYA Corp. (Japan)
Kazuhide Yamashiro, HOYA Corp. (Japan)
Yasushi Okubo, HOYA Corp. (Japan)
Yoichi Takehana, HOYA Corp. (Japan)


Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

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