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Proceedings Paper

Dose latitude dependency on resist contrast in e-beam mask lithography
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Paper Abstract

In mask-making process with e-beam lithography, the process capability is usually affected by exposure profile, resist contrast and development process. Dose latitude depends significantly on these three parameters. In this work, dose latitude between different resist contrasts has been experimentally studied as a function of linewidth, dose, beam size and over development magnitude using commercial PBS and ZEP 7000 resist on a photomask with 10 keV exposure. It has been found that ZEP 7000 resist with high contrast shows lower dose latitude, more sensitivity to the variation of linewidth, dose and beam size except for over development magnitude due to its relatively longer development time.

Paper Details

Date Published: 19 July 2000
PDF: 10 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392058
Show Author Affiliations
Byung-Cheol Cha, Samsung Electronics Co., Ltd. (South Korea)
Seong-Yong Moon, Samsung Electronics Co., Ltd. (South Korea)
Won-Tai Ki, Samsung Electronics Co., Ltd. (South Korea)
Seung-Hune Yang, Samsung Electronics Co., Ltd. (South Korea)
Seong-Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)
Hee-Sun Yoon, Samsung Electronics Co., Ltd. (South Korea)
Jung-Min Sohn, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

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