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Proceedings Paper

Proximity effect correction for reticle fabrication
Author(s): Masao Sugiyama; Shinji Kubo; Koji Hiruta; Takayuki Iwamatsu; Tatsuya Fujisawa; Hiroaki Morimoto
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Paper Abstract

As the LSI pattern density increases, the minimum feature size on reticle decreases and the required dimensional accuracy becomes more severe. To write patterns for 130nm- node device, the proximity effect correction is essential for electron beam mask writing system to obtain enough CD accuracy. We optimized the proximity effect correction parameters in EB mask writer, and the evaluated results are presented.

Paper Details

Date Published: 19 July 2000
PDF: 8 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392056
Show Author Affiliations
Masao Sugiyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Shinji Kubo, Semiconductor Leading Edge Technologies, Inc. (Japan)
Koji Hiruta, Semiconductor Leading Edge Technologies, Inc. (Japan)
Takayuki Iwamatsu, Semiconductor Leading Edge Technologies, Inc. (Japan)
Tatsuya Fujisawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroaki Morimoto, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

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