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Proceedings Paper

Process scheme for removing buffer layer on multilayer for EUVL mask
Author(s): Eiichi Hoshino; Taro Ogawa; Masashi Takahashi; Hiromasa Hoko; Hiromasa Yamanashi; Naoya Hirano; Akira Chiba; Masaaki Ito; Shinji Okazaki
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Paper Abstract

In the fabrication of masks for EUVL, a combination of dry and wet etching was used to remove the SiO2 buffer layer. This technique greatly improves the pattern quality, yielding re-entrant shaped mask patterns with a steep SiO2 sidewall. Under proper conditions, etching results in the base of the sidewall being recessed around 5 nm from the edge of the Ta pattern. The strength of hydrofluoric acid (HF) solution was set to 3.3 percent to allow good control of the etching rate. A combination of dry and wet etching is an effective way to remove the SiO2 buffer layer because it can compensate for a variation of as much as 7.6 percent in the thickness of the SiO2 film before etching.

Paper Details

Date Published: 19 July 2000
PDF: 7 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392050
Show Author Affiliations
Eiichi Hoshino, Association of Super-Advanced Electronics Technologies (Japan)
Taro Ogawa, Association of Super-Advanced Electronics Technologies (Japan)
Masashi Takahashi, Association of Super-Advanced Electronics Technologies (Japan)
Hiromasa Hoko, Association of Super-Advanced Electronics Technologies (Japan)
Hiromasa Yamanashi, Association of Super-Advanced Electronics Technologies (Japan)
Naoya Hirano, Association of Super-Advanced Electronics Technologies (Japan)
Akira Chiba, Association of Super-Advanced Electronics Technologies (Japan)
Masaaki Ito, Association of Super-Advanced Electronics Technologies (Japan)
Shinji Okazaki, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

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