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Proceedings Paper

Next-generation lithography mask development at the NGL-MCOC
Author(s): Michael J. Lercel; Kenneth C. Racette; Christopher Magg; Mark Lawliss; Kevin W. Collins; Monica Barrett; Michael J. Trybendis; Lucien Bouchard
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Paper Abstract

Masks for next generation lithographies present difficult technical processing, challenges for meeting the demanding requirements of future lithography. The Next Generation Lithography Mask Center of Competency is applying the proximity x-ray mask technology developed by the IBM advanced mask facility to all major NGL technologies. Mask fabrication has been demonstrated for proximity x-ray, scattering and stencil electron beam projection, and extreme UV lithographies. The imaging layer for these mask technologies differ significantly from one another and yet present similar processing challenges. This paper discuses the process technology developed at the NGL-MCOC associated with patterning the absorber layers. Issues with chemically amplified resist coating and baking and absorber etching are identified and associated with observed image size variations. The difficulty in the aspect ratio of. the absorber drives much of the processing requirements for the different NGL formats. High-aspect ratios on stencil and proximity x-ray masks require more difficult etch processes than those on lower-aspect ratio absorbers.

Paper Details

Date Published: 19 July 2000
PDF: 11 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392049
Show Author Affiliations
Michael J. Lercel, Photronics Inc. and IBM Microelectronics Div. (United States)
Kenneth C. Racette, Photronics Inc. and IBM Microelectronics Div. (United States)
Christopher Magg, Photronics Inc. and IBM Microelectronics Div. (United States)
Mark Lawliss, Photronics Inc. and IBM Microelectronics Div. (United States)
Kevin W. Collins, Photronics Inc. and IBM Microelectronics Div. (United States)
Monica Barrett, Photronics Inc. and IBM Microelectronics Div. (United States)
Michael J. Trybendis, Photronics Inc. and IBM Microelectronics Div. (United States)
Lucien Bouchard, Photronics Inc. and IBM Microelectronics Div. (United States)


Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

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