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Proceedings Paper

Another look at stepper lens reduction and field size
Author(s): Harry J. Levinson; Paul W. Ackmann; Lori Peters; John Arnaud
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Paper Abstract

It is possible to control linewidths on reticles over sufficiently large areas of reticles to provide benefit from increase in lens reduction. For some masking layers, the absolute control of dimensions is better for larger reticle field 5x reticles than for smaller field 4x reticles. The field size of critical layer steppers has an impact on the productivity of non-critical layer exposure tools that must be included in the determination of the overall lithography cost-of-ownership. Cost savings associated with greater lens reduction and reduced field size are greater for 200 mm than for 300 mm wafers. Results from a 7 inch mask are discussed.

Paper Details

Date Published: 19 July 2000
PDF: 7 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392048
Show Author Affiliations
Harry J. Levinson, Advanced Micro Devices, Inc. (United States)
Paul W. Ackmann, DPI Reticle Technology Ctr. (United States)
Lori Peters, DPI Reticle Technology Ctr. (United States)
John Arnaud, DPI Reticle Technology Ctr. (United States)


Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

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