Share Email Print
cover

Proceedings Paper

Mask critical dimension error on optical lithography
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Optical lithography at resolution limit is a non-linear pattern transfer. One of the important issue is a mask critical dimension control because of nonlinear amplification of mask critical dimension error during image transferring on wafer. This amplification of mask error is called the MEF. This mask error factor has been widely used as an important parameter for indicating tighter CD control for the photomask for low-kl lithography generation.

Paper Details

Date Published: 19 July 2000
PDF: 8 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392047
Show Author Affiliations
Tae-Seung Eom, Hyundai Electronics Industries Co., Ltd. (South Korea)
Sang-Sool Koo, Hyundai Electronics Industries Co., Ltd. (South Korea)
Seung-Weon Paek, Hyundai Electronics Industries Co., Ltd. (South Korea)
Hee-Bom Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Chang-Nam Ahn, Hyundai Electronics Industries Co., Ltd. (South Korea)
Ki-Ho Baik, Hyundai Electronics Industries Co., Ltd. (United States)


Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

© SPIE. Terms of Use
Back to Top