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Proceedings Paper

ArF halftone PSM cleaning process optimization for next-generation lithography
Author(s): Yong-Seok Son; Seong-Ho Jeong; Jeong-Bae Kim; Hong-Seok Kim
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Paper Abstract

ArF lithography which is expected for the next generation optical lithography is adapted for 0.13 micrometers design-rule and beyond. ArF half-tone phase shift mask (HT PSM) will be applied as 1st generation of ArF lithography. Also ArF PSM cleaning demands by means of tighter controls related to phase angle, transmittance and contamination on the masks. Phase angle on ArF HT PSM should be controlled within at least +/- 3 degree and transmittance controlled within at least +/- 3 percent after cleaning process and pelliclization. In the cleaning process of HT PSM, requires not only the remove the particle on mask, but also control to half-tone material for metamorphosis. Contamination defects on the Qz of half tone type PSM is not easy to remove on the photomask surface. New technology and methods of cleaning will be developed in near future, but we try to get out for limit contamination on the mask, without variation of phase angle and transmittance after cleaning process.

Paper Details

Date Published: 19 July 2000
PDF: 8 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392044
Show Author Affiliations
Yong-Seok Son, DuPont Photomasks Korea Ltd. (South Korea)
Seong-Ho Jeong, DuPont Photomasks Korea Ltd. (South Korea)
Jeong-Bae Kim, DuPont Photomasks Korea Ltd. (South Korea)
Hong-Seok Kim, DuPont Photomasks Korea Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

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