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Proceedings Paper

Improvement of defect density for DUV halftone PSM
Author(s): Kyu-Yong Lee; Lee-Ju Kim; Kyeong-Mee Yeon; Sang Woon Lee; Hong-Seok Kim
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Paper Abstract

As the required minimum feature size is rapidly down to sub- micron at photomask, the fabrication of alternate lithography techniques to extend and prolong current technology becomes critical important. So recently MoSi PSM are being applied in semiconductor lithography, primarily for high density layers such as found in memory chips. The increasing use of MoSi based attenuated phase shift masks necessitates defect reducing on the MoSi phase shift mask reticles. In this paper, in order to reduce the defect on the phase shift mask reticles, we will discuss the results of several experiments, utilizing CHF3/)2 gas mixture and SF6/He gas mixture chemistries and various process sequences. This paper reports the results of defect reducing for MoSi attenuated phase shifting masks using an inductively coupled plasma system.

Paper Details

Date Published: 19 July 2000
PDF: 6 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392039
Show Author Affiliations
Kyu-Yong Lee, DuPont Photomasks Korea Ltd. (South Korea)
Lee-Ju Kim, DuPont Photomasks Korea Ltd. (South Korea)
Kyeong-Mee Yeon, DuPont Photomasks Korea Ltd. (South Korea)
Sang Woon Lee, DuPont Photomasks Korea Ltd. (South Korea)
Hong-Seok Kim, DuPont Photomasks Korea Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

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