Share Email Print
cover

Proceedings Paper

Reticle defect sizing of optical proximity correction defects using SEM imaging and image analysis techniques
Author(s): Larry S. Zurbrick; Lantian Wang; Paul Konicek; Ellen R. Laird
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Sizing of programmed defects on optical proximity correction (OPC) feature sis addressed using high resolution scanning electron microscope (SEM) images and image analysis techniques. A comparison and analysis of different sizing methods is made. This paper addresses the issues of OPC defect definition and discusses the experimental measurement results obtained by SEM in combination with image analysis techniques.

Paper Details

Date Published: 19 July 2000
PDF: 8 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392037
Show Author Affiliations
Larry S. Zurbrick, KLA-Tencor Corp. (United States)
Lantian Wang, KLA-Tencor Corp. (United States)
Paul Konicek, VLSI Standards, Inc. (United States)
Ellen R. Laird, VLSI Standards, Inc. (United States)


Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

© SPIE. Terms of Use
Back to Top