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Proceedings Paper

Applications of MICP source for next-generation photomask process
Author(s): Hyuk-Joo Kwon; Byung-Soo Chang; Boo-Yeon Choi; Kyung Ho Park; Soo-Hong Jeong
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Paper Abstract

As critical dimensions of photomask extends into submicron range, critical dimension uniformity, edge roughness, macro loading effect, and pattern slope become tighter than before. Fabrication of photomask relies on the ability to pattern features with anisotropic profile. To improve critical dimension uniformity, dry etcher is one of the solution and inductively coupled plasma (ICP) sources have become one of promising high density plasma sources for dry etcher. In this paper, we have utilized dry etcher system with multi-pole ICP source for Cr etch and MoSi etch and have investigated critical dimension uniformity, slope, and defects. We will present dry etch process data by process optimization of newly designed dry etcher system. The designed pattern area is 132 by 132 mm2 with 23 by 23 matrix test patterns. 3 (sigma) of critical dimension uniformity is below 12 nm at 0.8 - 3.0 micrometers . In most cases, we can obtain zero defect masks which is operated by face- down loading.

Paper Details

Date Published: 19 July 2000
PDF: 8 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392028
Show Author Affiliations
Hyuk-Joo Kwon, PKL (South Korea)
Byung-Soo Chang, PKL (South Korea)
Boo-Yeon Choi, PKL (South Korea)
Kyung Ho Park, PKL (South Korea)
Soo-Hong Jeong, PKL (South Korea)


Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

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