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Proceedings Paper

EUV mask absorber characterization and selection
Author(s): Pei-yang Yan; Guojing Zhang; Patrick Kofron; Jeffrey E. Powers; Mark Tran; Ted Liang; Alan R. Stivers; Fu-Chang Lo
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Paper Abstract

In this paper, we will present our research work in EUVL mask absorber characterization and selection. The EUV mask patterning process development depends on the choice of EUVL mask absorber material, which has direct impact on the mask quality such as critical dimension (CD) control, and registration. EUVL mask absorber material selection consideration involves many aspects of material properties and processes. These include film absorption at EUV wavelength, film emissivity, film stress, mask CD and defect control, defect inspection contrast, absorber repair selectivity to the buffer layer, etc. The selection of the best candidate is non-trivial since no material is found to be superior in all aspects. In an effort of searching the best absorber materials and processes, we evaluated Al-Cu, Ti, TiN, Ta, TaN, and Cr absorbers. The comparison of material intrinsic properties and process properties allowed us to focus on the most promising absorbers and to further develop the corresponding processes to meet EUVL requirement.

Paper Details

Date Published: 19 July 2000
PDF: 8 pages
Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); doi: 10.1117/12.392025
Show Author Affiliations
Pei-yang Yan, Intel Corp. (United States)
Guojing Zhang, Intel Corp. (United States)
Patrick Kofron, Intel Corp. (United States)
Jeffrey E. Powers, Intel Corp. (United States)
Mark Tran, Intel Corp. (United States)
Ted Liang, Intel Corp. (United States)
Alan R. Stivers, Intel Corp. (United States)
Fu-Chang Lo, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 4066:
Photomask and Next-Generation Lithography Mask Technology VII
Hiroaki Morimoto, Editor(s)

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