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Proceedings Paper

2DEG channel-dependent model for Hg1-xCdxTe-based pseudomorphic HEMTs
Author(s): Hang-Ming Dai; Thomas J. Sanders
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Paper Abstract

HgCdTe has emerged as an important electronic material because of its IRFPA applications. Technologies for growing the material are advanced and current sources for the material are more readily available than in the past. This brings an advantage to the manufacturing other types of HgCdTe devices. PHEMTs are attractive as applications of high-speed devices. In this paper, a model for PHEMT devices by using Hg1-xCdxTe as device materials is presented. High digital performance of the device is expected because electron mobility of the material is very high at low temperatures.

Paper Details

Date Published: 18 July 2000
PDF: 9 pages
Proc. SPIE 4042, Enabling Photonic Technologies for Aerospace Applications II, (18 July 2000); doi: 10.1117/12.391910
Show Author Affiliations
Hang-Ming Dai, Florida Institute of Technology (United States)
Thomas J. Sanders, Florida Institute of Technology (United States)


Published in SPIE Proceedings Vol. 4042:
Enabling Photonic Technologies for Aerospace Applications II
Edward W. Taylor; Andrew R. Pirich, Editor(s)

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