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Proceedings Paper

Modulation-doped InGaAsP QW laser emitting at 1.55 um
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Paper Abstract

A number of parameters, such as gain, modulation response, linewidth enhancement factor and relative intensity noise in modulation-doped InGaAsP QW laser emitting at 1.55 micrometers have been theoretically investigated. The results indicate that the relaxation oscillation frequency for p-type modulation doped QW laser is enhanced by a factor of more than 2 compared to that for undoped MQW lasers, the linewidth enhancement factor of p-type modulation doped QW laser is reduced to 1/5 of that of undoped MQW laser and the relative intensity noise is reduced by a factor of > 10 dB compared to that for undoped MQW lasers.

Paper Details

Date Published: 18 July 2000
PDF: 7 pages
Proc. SPIE 4042, Enabling Photonic Technologies for Aerospace Applications II, (18 July 2000); doi: 10.1117/12.391903
Show Author Affiliations
Niloy Choudhury, Univ. of Connecticut (United States)
Niloy K. Dutta, Univ. of Connecticut (United States)


Published in SPIE Proceedings Vol. 4042:
Enabling Photonic Technologies for Aerospace Applications II
Edward W. Taylor; Andrew R. Pirich, Editor(s)

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