Share Email Print

Proceedings Paper

Above-GaAs-band-gap reflection modulator
Author(s): Mary S. Tobin; John D. Bruno; John T. Pham
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Multiple triple quantum wells (TQWs) are used in the active region of an AlGaAs p-i-n diode for a reflection modulator operating above the GaAs band gap. Photocurrent spectra of the TQW-based diode show sharp absorption features that retain their spectral character with reverse bias and show large Stark shifts--comparable to those obtained from alternative active-layer designs. Some performance characteristics of an 810-nm reflection modulator using the TQW active-layer design are presented. We also describe time-resolved pump/probe measurements made on a series of TQW-based p-i-n diodes with differing p-layer conductivity and contrast results with the predictions of a simplified model of the carrier dynamics.

Paper Details

Date Published: 18 July 2000
PDF: 11 pages
Proc. SPIE 4042, Enabling Photonic Technologies for Aerospace Applications II, (18 July 2000); doi: 10.1117/12.391900
Show Author Affiliations
Mary S. Tobin, Army Research Lab. (United States)
John D. Bruno, Army Research Lab. (United States)
John T. Pham, Army Research Lab. (United States)

Published in SPIE Proceedings Vol. 4042:
Enabling Photonic Technologies for Aerospace Applications II
Edward W. Taylor; Andrew R. Pirich, Editor(s)

© SPIE. Terms of Use
Back to Top