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Proceedings Paper

320x240 microblometer uncooled IRFPA
Author(s): Eric Mottin; Jean-Luc Martin; Jean-Louis Ouvrier-Buffet; Michel Vilain; Jean-Jacques Yon; Jean-Pierre Chatard
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Paper Abstract

LETI LIR has been involved in Amorphous Silicon uncooled microbolometer development for a few years. This silicon IR detection is now well mastered and matured so that industrial transfer LETI/LIR technology is performed towards Sofradir. Industrial production of 320 X 240 mirobolometer array with 45 micrometer pitch started. After a short description of the technology and the readout circuit architecture we focus on device reliability which is the key point for microbolometer application. Methodology for reliability enhancement is described. First results obtained on amorphous silicon reliability are presented. Electro-optical results obtained from an IRCMOS 320 X 240 with 45 micrometer pitch are presented. NEDT close to 70 mK can be obtained with our standard microbolometer amorphous silicon technology.

Paper Details

Date Published: 17 July 2000
PDF: 7 pages
Proc. SPIE 4028, Infrared Detectors and Focal Plane Arrays VI, (17 July 2000); doi: 10.1117/12.391765
Show Author Affiliations
Eric Mottin, CEA-LETI (France)
Jean-Luc Martin, CEA-LETI (France)
Jean-Louis Ouvrier-Buffet, CEA-LETI (France)
Michel Vilain, CEA-LETI (France)
Jean-Jacques Yon, CEA-LETI (France)
Jean-Pierre Chatard, SOFRADIR (France)


Published in SPIE Proceedings Vol. 4028:
Infrared Detectors and Focal Plane Arrays VI
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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